Part Number Hot Search : 
GSBA3 F1001 2815T KE400A L78M00 N5401 IDT71V A1249
Product Description
Full Text Search

MTD6N10 - POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

MTD6N10_948523.PDF Datasheet

 
Part No. MTD6N10
Description POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

File Size 167.78K  /  5 Page  

Maker


Motorola, Inc



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MTD6N10
Maker: ON
Pack: TO-252
Stock: Reserved
Unit price for :
    50: $0.18
  100: $0.17
1000: $0.16

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com/
Download [ ]
[ MTD6N10 Datasheet PDF Downlaod from Datasheet.HK ]
[MTD6N10 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MTD6N10 ]

[ Price & Availability of MTD6N10 by FindChips.com ]

 Full text search : POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT


 Related Part Number
PART Description Maker
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MTM2N50 Power Field Effect Transistor
New Jersey Semi-Conductor Products, Inc.
MRF1518T1 MRF1518NT1 RF Power Field Effect Transistor
MOTOROLA[Motorola, Inc]
MRF1517T1 RF Power Field Effect Transistor
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
MTP2N80 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MTM25N10 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
 
 Related keyword From Full Text Search System
MTD6N10 datasheet online MTD6N10 替换 MTD6N10 step MTD6N10 filetype:pdf MTD6N10 Planar
MTD6N10 Filter MTD6N10 filetype:pdf MTD6N10 performance MTD6N10 atmel MTD6N10 external rom
 

 

Price & Availability of MTD6N10

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.43717312812805